The Light Emitting Transistor (LET) was developed by Professors Nick Holonyak Jr. and Milton Feng in 2004. The LET is fabricated from indium gallium phosphide, indium gallium arsenide, and gallium arsenide. It is the unique properties of these materials that produce the infrared photons. Added benefits of the LET are that it is faster than the LED at producing light. Light intensity can be controlled by adjusting the electrical current. The third transistor port allows for superior control of the electrical and optical outputs. Future applications for the LET involve replacing the wires in electronics with fiber optics producing higher performance devices.
Works Cited:
Kloeppel,
James E. “NEW LIGHT-EMITTING TRANSISTOR COULD REVOLUTIONIZE ELECTRONICS
INDUSTRY.” News Bureau Illinois, Jan 2004. Web.05 Jan.2004 http://news.illinois.edu/news/04/0105LET.html
Light
Emitting Transistor and Laser. Office of Technology Management University of Illinois
Urbana Champaign, n.d. Web. http://otm.illinois.edu/technologies/light-emitting-transistor-and-laser
Light Emitting Transistor Procured from Milton Feng :
http://cas.illinois.edu/person/milton-feng/
http://cas.illinois.edu/person/milton-feng/
